Liquid crystal display device having thin film transistors for reducing leak current
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United States of America Patent
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Sep 23, 2003
Grant Date -
Jan 10, 2002
app pub date -
Jul 3, 2001
filing date -
Jul 7, 2000
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Abstract
According to the present invention, a channel protection film is formed a little smaller in area than the gate electrode formed of a shielding metal film. A semiconductor thin film is formed such that the thickness is set not less than 200 .ANG. and less than 400 .ANG.. A distance A between the edge of the gate electrode in the channel length direction and the edge of the channel protection film is set around 0.2-1.2 .mu.m, and a distance B between the edge of the gate electrode in the channel width direction and the edge of the channel protection film is set around 1-2 .mu.m. With this constitution, the leak current of the thin film transistor due to the light irradiation can be reduced.
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