Method of producing high dielectric insulator for integrated circuit
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United States of America Patent
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Sep 23, 2003
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N/A
app pub date -
Oct 9, 2002
filing date -
Oct 9, 2002
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Expired
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Abstract
A high dielectric insulator for integrated circuit use is produced by depositing hafnium on a silicon dioxide surface of a silicon wafer and then promoting a solid-state reaction between the silicon dioxide and the hafnium by heating the wafer to produce hafnium silicate.
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