Capacitor structure of semiconductor device and method for forming the same
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United States of America Patent
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Sep 16, 2003
Grant Date -
Jun 5, 2003
app pub date -
Oct 24, 2002
filing date -
Dec 3, 2001
priority date (Note) -
Expired
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Abstract
A capacitor structure includes a device isolation layer pattern formed at a predetermined region of a semiconductor substrate to define an active region; an upper electrode disposed over an upper center of the active region to expose an edge of the active region; a lower electrode region formed in the active region under the upper electrode; and a lightly doped region overlapping with an outer edge of the lower electrode region. In this manner, the resulting breakdown voltage of the device can be increased.
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