Apparatus for in-situ thickness and stoichiometry measurement of thin films
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United States of America Patent
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Sep 9, 2003
Issued Date -
N/A
app pub date -
Nov 19, 2001
filing date -
Aug 20, 1997
priority date (Note) -
Expired
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Abstract
An apparatus and method for using .alpha.-particle energy loss to measure the thickness and stoichiometry of films grown by molecular beam epitaxy and other methods. The apparatus for measuring the thickness of films grown on a substrate in a growth chamber, comprises a protective housing having an aperture opening into the growth chamber, a solid state detector disposed in the protective housing, a shutter for opening and closing the aperture, a shield disposed in the housing between the aperture and the solid state detector for shielding the detector, and a calibration source disposed between the shield and the detector for calibrating the measurements made by the detector. A second calibration source disposed between the shutter and the shield, for measuring deposition on the shield.
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