Method for forming a Cu interconnect pattern
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United States of America Patent
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Aug 19, 2003
Grant Date -
N/A
app pub date -
Sep 7, 2000
filing date -
Sep 13, 1999
priority date (Note) -
Expired
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Abstract
A method for forming a Cu interconnect pattern on a ZnO film of a printed circuit board without using a metallic catalyst on the ZnO film includes the steps of replacing Zn in the ZnO film by Cu in an aqueous solution of copper sulfate to form a CuO film, reducing the CuO in the CuO film to Cu in an aqueous solution of hydrogenated boron potassium to form a metallic Cu film, and plating the metallic Cu film with a plating Cu film in a plating liquid. The absence of the metallic catalyst improves the insulation resistance of the Cu interconnect pattern in the printed circuit board.
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