Rapid-temperature pulsing anneal method at low temperature for fabricating layered superlattice materials and making electronic devices including same
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United States of America Patent
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Aug 19, 2003
Grant Date -
Aug 15, 2002
app pub date -
Feb 12, 2001
filing date -
Feb 12, 2001
priority date (Note) -
Expired
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Abstract
A liquid precursor for forming a layered superlattice material is applied to an integrated circuit substrate. The precursor coating is annealed in oxygen using a rapid temperature pulsing anneal ('RPA') technique with a ramp rate of 30.degree. C./second at a hold temperature of 650.degree. C. for a holding time of 30 minutes. The RPA technique includes applying a plurality of rapid-temperature heat pulses in sequence.
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