Reduced area intersection between electrode and programming element
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United States of America Patent
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Aug 12, 2003
Grant Date -
Jan 2, 2003
app pub date -
Jun 30, 2001
filing date -
Jun 30, 2001
priority date (Note) -
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Abstract
A method comprising forming a first dielectric layer over an electrode formed to a first contact point on a substrate, the electrode having a contact area; patterning the first dielectric layer into a body, a thickness of the first dielectric layer defining a side wall; forming at least one spacer along the side wall of the first dielectric body, the at least one spacer overlying a portion of the contact area; forming a second dielectric layer on the contact area; removing the at least one spacer; and forming a material comprising a second contact point to the contact area. An apparatus comprising a volume of programmable material; a conductor; and an electrode disposed between the volume of programmable material and the conductor, the electrode having a contact area coupled to the volume of programmable material.
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