TANTALUM TERTIARY AMYLIMIDO TRIS (DIMETHYLAMIDE), A PROCESS FOR PRODUCING THE SAME, A SOLUTION OF STARTING MATERIAL FOR MOCVD USING THE SAME, AND A METHOD OF FORMING A TANTALUM NITRIDE FILM USING THE SAME
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Jul 15, 2003
Grant Date -
Aug 22, 2002
app pub date -
Nov 9, 2001
filing date -
Dec 25, 2000
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
A stable compound having a vapor pressure higher by 1 order than that of Ta(NtBu)(NEt.sub.2).sub.3 is provided as a starting material for forming a TaN film as a barrier film by the CVD method. There are further provided a process for producing the same and a method of forming a TaN film by using the same. The novel compound, tantalum tertiary amylimido tris(dimethylamide) [Ta(NtAm)(NMe.sub.2).sub.3 ] has a vapor pressure of 1 Torr at 80.degree. C., and its melting point is 36.degree. C. This compound is obtained by allowing 1 mole of TaCl.sub.5, 4 moles of LiNMe.sub.2 and 1 mole of LiNHtAm to react with one another in an organic solvent in the vicinity of room temperature, then separating byproducts by filtration, distilling the solvent away, and distilling the product in vacuo. This compound can be used as a starting material in CVD to form a cubic TaN film on a SiO.sub.2 /Si substrate at 550.degree. C. at 0.05 Torr.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully