Method of treating an isulating layer
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United States of America Patent
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Jul 15, 2003
Grant Date -
N/A
app pub date -
May 11, 2000
filing date -
Feb 26, 1999
priority date (Note) -
Expired
status (Latency Note)
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Abstract
This invention relates to a method of heating an insulating layer, such as is found in semiconductor devices, in which a formation has been etched through a layer of resist comprising reactive etching the resist, inhibiting absorption of or removing water vapor and/or oxygen at the exposed surfaces of the etched formation and filling the formation with conductive metal in the absence of said water vapor and/or oxygen.
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