Chemical vapor deposition apparatus and chemical vapor deposition method
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United States of America Patent
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-
Jul 15, 2003
Grant Date -
Apr 11, 2002
app pub date -
Sep 26, 2001
filing date -
Oct 2, 2000
priority date (Note) -
Expired
status (Latency Note)
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Abstract
There are disclosed an apparatus and a method for chemical vapor deposition for a semiconductor film and the like, wherein a feed gas is supplied in a horizontal tubular reactor in the direction parallel to a substrate; a forcing gas is supplied therein in the direction perpendicular to the substrate; and the flow rate per unit area of the forcing gas which is supplied from a forcing gas introduction portion into the reactor is made lower in the central portion of the forcing gas introduction portion than in the peripheral portion thereof, or lower in the middle of a feed gas passageway than at both the end portions of the passageway. It is made possible by the apparatus and method to assure high quality crystals without generating a deposit of decomposed products or reaction products on a tubular reactor wall in opposition to the substrate even in the case of carrying out chemical vapor deposition of a large-sized substrate or simultaneously conducting that of a plurality of substrates, or performing the same at a high temperature.
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