Clock synchronous semiconductor memory device having a reduced access time

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United States of America Patent

PATENT NO 6587385
APP PUB NO 20010019503A1
SERIAL NO

09843689

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Abstract

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In successively executed operations modes in a synchronous semiconductor memory device, data access time after the application of a row access command is reduced by providing a plurality of control signal lines, such as a differential pair of sense amplifier enable lines, advantageously shorting the control lines, and then driving the control lines to a predetermined voltage level after the elapse of a prescribed time period.

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Patent Owner(s)

Patent OwnerAddress
DRAM MEMORY TECHNOLOGIES LLC500 NEWPORT CENTER DRIVE NEWPORT BEACH CA 92660

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Ooishi, Tsukasa Hyogo, JP 317 7821

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