Chemical mechanical polishing slurry
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United States of America Patent
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Jul 1, 2003
Grant Date -
Jul 18, 2002
app pub date -
Nov 21, 2001
filing date -
Nov 24, 2000
priority date (Note) -
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Abstract
This invention provides a chemical mechanical polishing slurry for polishing a copper-based metal film formed on an insulating film comprising a concave on a substrate, comprising a polishing material, an oxidizing agent and water as well as a benzotriazole compound and a triazole compound. The polishing slurry may be used in CMP to form a reliable damascene electric connection with excellent electric properties at a higher polishing rate, i.e., a higher throughput while preventing dishing.
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