Method of manufacturing a semiconductor device
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Jun 24, 2003
Grant Date -
Jun 19, 2003
app pub date -
May 10, 2002
filing date -
Dec 17, 2001
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
On a substrate, a gate insulating film, a polysilicon film on the gate insulating film, and a resist pattern on the polysilicon film are formed. Subsequently an exposed portion of the polysilicon film which is not covered with the resist pattern is removed. The surface of the polysilicon film left after the step of removing the exposed portion of the polysilicon film is thermally oxidized to form a gate electrode and an insulating film simultaneously on the surface of the gate electrode.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully