High resistivity silicon wafer with thick epitaxial layer and method of producing same
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United States of America Patent
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Jun 24, 2003
Grant Date -
Jun 12, 2003
app pub date -
Dec 6, 2001
filing date -
Dec 6, 2001
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Abstract
A silicon wafer having a thick, high-resistivity epitaxially grown layer and a method of depositing a thick, high-resistivity epitaxial layer upon a silicon substrate, such method accomplished by: a) providing a silicon wafer substrate and b) depositing a substantially oxygen free, high-resistivity epitaxial layer, with a thickness of at least 50 .mu.m, upon the surface of the silicon wafer. The silicon wafer substrate may then, optionally, be removed from the epitaxial layer.
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