Electron beam modification of CVD deposited low dielectric constant materials

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United States of America Patent

PATENT NO 6582777
SERIAL NO

09506515

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Abstract

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A process for forming low dielectric constant dielectric films for the production of microelectronic devices. A dielectric layer is formed on a substrate by chemical vapor depositing a monomeric or oligomeric dielectric precursor in a chemical vapor deposit apparatus, or a reaction product formed from the precursor in the apparatus, onto a substrate, to form a layer on a surface of a substrate. After optionally heating the layer at a sufficient time and temperature to dry the layer, the layer is then exposed to electron beam radiation, for a sufficient time, temperature, electron beam energy and electron beam dose to modify the layer. The electron beam exposing step is conducted by overall exposing the dielectric layer with a wide, large beam of electron beam radiation from a large-area electron beam source.

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Patent Owner(s)

Patent OwnerAddress
ELECTRON VISION CORPORATION10317 LEAFWOOD PLACE SAN DIEGO CA 92131

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Ross, Matthew La Jolla, CA 22 311
Thompson, Heike San Diego, CA 4 102
Yang, Jingjun Cary, NC 12 252

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