Method for tungsten deposition without fluorine-contaminated silicon substrate
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United States of America Patent
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Jun 24, 2003
Grant Date -
N/A
app pub date -
Oct 12, 2000
filing date -
Oct 12, 2000
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Expired
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Abstract
A method for forming tungsten structures over silicon substrates, including the following steps. A silicon substrate is having a patterned dielectric layer formed thereon defining a tungsten structure opening is provided. The silicon substrate is pre-heated to a temperature of from about 430 to 440.degree. C. A Si-rich WS.sub.x layer is formed over the patterned dielectric layer, lining the tungsten structure opening. A WSi.sub.x nucleation layer is formed over the Si-rich WSi.sub.x layer. A tungsten bulk layer is formed over the WSi.sub.x nucleation layer, filling the tungsten structure opening, whereby fluorine attack of the Si substrate is minimized.
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