Silicon nitride sintered products and processes for their production

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United States of America Patent

PATENT NO 6579819
APP PUB NO 20020045530A1
SERIAL NO

09796430

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Abstract

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A silicon nitride sintered product comprising silicon nitride grains and a grain boundary phase, wherein the grain boundary phase consists essentially of a single phase of a Lu.sub.4 Si.sub.2 O.sub.7 N.sub.2 crystal phase, and the composition of the silicon nitride sintered product is a composition in or around a triangle ABC having point A: Si.sub.3 N.sub.4, point B: 28 mol % SiO.sub.2 -72 mol % Lu.sub.2 O.sub.3 and point C: 16 mol % SiO.sub.2 -84 mol % Lu.sub.2 O.sub.3, as three apexes, in a ternary system phase diagram of a Si.sub.3 N.sub.4 --SiO.sub.2 --Lu.sub.2 O.sub.3 system. Also disclosed is a silicon nitride sintered product comprising silicon nitride grains and a grain boundary phase of an oxynitride, wherein the composition of the sintered product is a composition in a triangle having point A: Si.sub.3 N.sub.4, point B: 40 mol % SiO.sub.2 -60 mol % Lu.sub.2 O.sub.3 and point C: 60 mol % SiO.sub.2 -40 mol % Lu.sub.2 O.sub.3, as three apexes, in a ternary system phase diagram of a Si.sub.3 N.sub.4 --SiO.sub.2 --Lu.sub.2 O.sub.3 system.

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Patent Owner(s)

Patent OwnerAddress
NATIONAL INSTITUTE FOR RESEARCH IN INORGANIC MATERIALSTSUKUBA-SHI IBARAKI 305

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Hirosaki, Naoto Ibaraki, JP 119 1818
Mitomo, Mamoru Ibaraki, JP 22 705
Nishimura, Toshiyuki Ibaraki, JP 12 249
Yamamoto, Yoshinobu Ibaraki, JP 46 1225

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