Self-aligned, programmable phase change memory
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United States of America Patent
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Jun 17, 2003
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N/A
app pub date -
Mar 28, 2002
filing date -
Mar 28, 2002
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Abstract
A self-aligned, nonvolatile memory structure based upon phase change materials, including chalcogenides, can be made with a very small area on an integrated circuit. The manufacturing process results in self-aligned memory cells requiring only two array-related masks defining the bit lines and word lines. Memory cells are defined at intersections of bit lines and word lines, and have dimensions that are defined by the widths of the bit lines and word lines in a self-aligned process. The memory cells comprise structures including a selection device, a heating/barrier plate layer and a phase change memory element, vertically arranged at the intersections of the bit lines and word lines.
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