Manufacturing method for semiconductor device and semiconductor manufacturing apparatus
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United States of America Patent
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Jun 3, 2003
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N/A
app pub date -
Apr 21, 2000
filing date -
Apr 21, 1999
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Abstract
A method for manufacturing a semiconductor device, includes forming a film on a substrate to be processed in a reaction furnace at a first temperature, unloading the substrate from the reaction furnace, and lowering a temperature in the reaction furnace to a second temperature which is lower than the first temperature, conducting a gas purge, using only an inert gas, in the reaction furnace after the substrate has been unloaded from the reaction furnace.
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