Method for depositing an amorphous carbon layer

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United States of America Patent

PATENT NO 6573030
SERIAL NO

09590322

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Abstract

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A method of forming an integrated circuit using an amorphous carbon film. The amorphous carbon film is formed by thermally decomposing a gas mixture comprising a hydrocarbon compound and an inert gas. The amorphous carbon film is compatible with integrated circuit fabrication processes. In one integrated circuit fabrication process, the amorphous carbon film is used as a hardmask. In another integrated circuit fabrication process, the amorphous carbon film is an anti-reflective coating (ARC) for deep ultraviolet (DUV) lithography. In yet another integrated circuit fabrication process, a multi-layer amorphous carbon anti-reflective coating is used for DUV lithography.

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Patent Owner(s)

Patent OwnerAddress
APPLIED MATERIALS INC3050 BOWERS AVENUE SANTA CLARA CA 95054

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Bencher, Christopher Dennis Sunnyvale, CA 100 4880
Fairbairn, Kevin Los Gatos, CA 55 8337
Latchford, Ian Scot Sunnyvale, CA 7 2297
Ngai, Christopher S Burlingame, CA 33 2515
Rice, Michael Pleasanton, CA 100 5907
Wang, Yuxiang May San Jose, CA 11 3199
Weidman, Timothy Sunnyvale, CA 52 3650

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