Bonding of silicon wafers
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United States of America Patent
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May 27, 2003
Grant Date -
N/A
app pub date -
Jul 27, 1993
filing date -
Jul 27, 1993
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Expired
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Abstract
The invention concerns the use of spin-on-glass (SOG) to bond two layers of semiconductor together, in order to form a Silicon-on-Insulator (SOI) structure. One type of SOG is a cross-linked siloxane polymer, preferably of the poly-organo-siloxane type, comprising a carbon content of at least 5 atomic weight percent.
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