Magnetron negative ion sputter source
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United States of America Patent
Stats
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May 27, 2003
Grant Date -
Jun 13, 2002
app pub date -
May 11, 2000
filing date -
May 12, 1999
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A negative ion source is disclosed which includes an electrode, a target having a more negative electrical potential than the electrode, a supply of electrical energy for generating a discharge between the electrode and the target, and at least one magnet positioned so as to confine electrons, generated as a result of said discharge, in close proximity to a first surface of the target. The negative ion source further includes a delivery system for delivering cesium to a second surface of the target, and a distribution chamber interposed between the delivery system and the target for uniformly distributing cesium on the second surface of said target. The cesium diffuses through openings in the target from the first surface to the second surface. The negative ion source may comprise a conventional magnetron sputter source that has been retrofitted to include a cesium distribution system.

First Claim
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- 15 United States
- 10 France
- 8 Japan
- 7 China
- 5 Korea
- 2 Other
Patent Owner(s)
Patent Owner | Address | |
---|---|---|
PLASMION CORPORATION | 50 HARRISON STREET HOBOKEN NJ 07030 |
International Classification(s)
Inventor(s)
Inventor Name | Address | # of filed Patents | Total Citations |
---|---|---|---|
Kim, Steven | Harrington Park, NJ | 194 | 7653 |
Sohn, Minho | Newton, MA | 26 | 235 |
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Fee | Large entity fee | small entity fee | micro entity fee | due date |
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Fee | Large entity fee | small entity fee | micro entity fee |
---|---|---|---|
Surcharge after expiration - Late payment is unavoidable | $700.00 | $350.00 | $175.00 |
Surcharge after expiration - Late payment is unintentional | $1,640.00 | $820.00 | $410.00 |
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