Lithography process for transparent substrates
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United States of America Patent
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May 20, 2003
Grant Date -
N/A
app pub date -
Nov 28, 2001
filing date -
Nov 28, 2001
priority date (Note) -
Expired
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Abstract
A method of creating an undercut sidewall profile within an opening formed in a positive resist layer disposed upon a transparent substrate includes the step of forming a positive resist layer on the upper surface of the substrate, and optically patterning the resist layer by selectively directing light at the resist layer from above the upper surface of the substrate. The lower surface of the substrate is flooded with light to partially expose the lowermost region of the resist layer, and the exposed resist is dissolved to form patterned openings therein. The resulting sidewalls of the patterned resist openings have an enlarged width adjacent the upper surface of the substrate. The sidewalls of the resist layer are then flooded with light from above the substrate, the upper region of the resist layer is cured by an electron beam, and the resist layer is developed a second time to dissolve exposed portions of the resist sidewalls, thereby forming an undercut resist sidewall profile.
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