Formation method for semiconductor layer
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United States of America Patent
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May 13, 2003
Grant Date -
Aug 1, 2002
app pub date -
Apr 19, 2001
filing date -
Apr 21, 2000
priority date (Note) -
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Abstract
After a Group III-V compound semiconductor layer, to which a p-type dopant has been introduced, has been formed over a substrate, the compound semiconductor layer is annealed. In the stage of heating the compound semiconductor layer, atoms, deactivating the p-type dopant, are eliminated from the compound semiconductor layer by creating a temperature gradient in the compound semiconductor layer.
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