Field-plate MESFET
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United States of America Patent
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May 6, 2003
Grant Date -
N/A
app pub date -
Apr 22, 2002
filing date -
Apr 22, 2002
priority date (Note) -
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Abstract
A planar MESFET transistor includes a plurality of FET elements. Each FET element includes a doped planar channel, and source and drain coupled to the ends of the channel. A gate conductor extends over a portion of the channel at a location lying between the source and drain, a first predetermined distance from the drain. A field plate is connected to the gate conductor, and extends toward the drain a second predetermined distance, isolated from the channel except at its gate conductor connection by a dielectric material.
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