Electron beam annealing of metals, alloys, nitrides and silicides
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United States of America Patent
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Apr 22, 2003
Grant Date -
N/A
app pub date -
Jun 8, 2000
filing date -
Jun 9, 1999
priority date (Note) -
Expired
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Abstract
A process for the formation of structures in microelectronic devices such as integrated circuit devices wherein a patterned layer of a metal, alloy, nitride or silicide is subjected to a low temperature, wide beam electron beam annealing. The process involves depositing a silicide, nitride, metal, or metal alloy layer onto a substrate; and then overall flood exposing said entire layer to electron beam radiation under conditions sufficient to anneal the layer.
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