Silicon nitride film comprising amorphous silicon quantum dots embedded therein, its fabrication method and light-emitting device using the same
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United States of America Patent
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Apr 8, 2003
Grant Date -
Oct 24, 2002
app pub date -
Apr 18, 2001
filing date -
Apr 18, 2001
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Abstract
The present invention relates to a light-emitting device utilizing amorphous silicon quantum dot nanostructures, wherein the light-emitting device can be fabricated using the existing silicon semiconductor fabrication technology, is excellent in light-emitting efficiency, and can emit light in the visible region including short wavelength region such as green and blue.
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