Shallow trench isolation method for forming rounded bottom trench corners
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Apr 8, 2003
Grant Date -
N/A
app pub date -
Mar 6, 2000
filing date -
Mar 6, 2000
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
A method for forming a trench for a shallow trench isolation structure wherein the trench has rounded bottom corners. In one embodiment, the present invention performs a breakthrough etch to remove a native oxide layer disposed over a region of a semiconductor substrate. In so doing, a region of the semiconductor substrate is exposed. Next, the present embodiment etches a trench into the semiconductor substrate using a first etching environment. In this embodiment, the first etching environment is comprised of chlorine, hydrogen bromide, helium, and oxygen. The present embodiment then rounds the bottom corners of the trench using a second etching environment. In this embodiment, the second etching environment is comprised sulfur hexafluoride (SF.sub.6) and chlorine. In so doing, the present embodiment provides a method for forming a trench for a shallow trench isolation structure wherein the trench does not have sharp bottom corners formed therein.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully