Method of chemically growing a thin film in a gas phase on a silicon semiconductor substrate
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United States of America Patent
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Mar 25, 2003
Grant Date -
Apr 18, 2002
app pub date -
Aug 6, 2001
filing date -
Aug 29, 2000
priority date (Note) -
Expired
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Abstract
A method of chemically growing a thin film in a gas phase using a rotary gaseous phase thin film growth apparatus which feeds a material gas by flowing down the gas from above to a surface of a rotating silicon semiconductor substrate to grow a thin film on a surface of said silicon semiconductor substrate in a method of chemically growing a thin film that a thin film-growing reaction is done wherein: monosilane gas is used as an effective component of the material gas to grow the thin film under a reduced pressure of from 2.7.times.10.sup.2 to 6.7.times.10.sup.3 Pa with the number of rotations of said silicon semiconductor substrate being from 500 to 2000 min.sup.-1 and at a reaction temperature of from 600.degree. C. to 800.degree. C.
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