Semiconductor device and process of fabricating same
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United States of America Patent
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-
Mar 25, 2003
Grant Date -
Feb 28, 2002
app pub date -
Aug 16, 2001
filing date -
May 1, 1998
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A semiconductor device fabrication process includes forming a Schottky layer, a cap layer covering the surface of the Schottky layer, and a Schottky electrode of a two-level structure having a lower portion that penetrates through the cap layer and reaches the Schottky layer, and having an upper portion larger than the lower portion in cross-sectional area and that overlies the cap layer. With this construction, surface defects are unlikely to occur, so that a highly reliable semiconductor device can be fabricated.
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