Manufacture of silica waveguides with minimal absorption
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United States of America Patent
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Mar 25, 2003
Grant Date -
Jun 13, 2002
app pub date -
Mar 7, 2001
filing date -
Dec 12, 2000
priority date (Note) -
Expired
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Abstract
An improved high temperature chemical treatment of deposited silica films wherein they are subjected to a reactive ambient comprising hydrogen and oxygen atoms. This method results in better elimination of residual undesirable oscillators so as to provide improved optical quality silica waveguides with reduced optical absorption.
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