System and method for improving thin films by gas cluster ion beam processing
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United States of America Patent
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Mar 25, 2003
Grant Date -
Feb 7, 2002
app pub date -
Jul 10, 2001
filing date -
Jul 10, 2000
priority date (Note) -
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Abstract
The present invention provides apparatus and methods to carry out the task of both reducing the surface roughness (smoothing) and improving the thickness uniformity of, preferably, but not limited thereto, the top silicon film of a silicon-on-insulator (SOI) wafer or similar thin-film electronic and photonic materials (workpiece). It also provides a method and apparatus for smoothing the surface of a (preferably) SOI wafer (workpiece) and for making the surface of the silicon film of a (preferably) SOI wafer cleaner and more free from contaminants.
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