Process for obtaining a layer of single-crystal germanium on a substrate of single-crystal silicon, and products obtained
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United States of America Patent
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Mar 25, 2003
Grant Date -
N/A
app pub date -
Mar 9, 2001
filing date -
Sep 10, 1998
priority date (Note) -
Expired
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Abstract
The invention concerns a method which consists in: (a) stabilization of the monocrystalline silicon substrate temperature at a first predetermined temperature T.sub.1 of 400 to 500.degree. C.; (b) chemical vapour deposition (CVD) of germanium at said first predetermined temperature T.sub.1 until a base germanium layer is formed on the substrate, with a predetermined thickness less than the desired final thickness; (c) increasing the CVD temperature from said first predetermined temperature T.sub.1 up to a second predetermined temperature T.sub.2 of 750 to 850.degree. C.; and (d) carrying on with CVD of germanium at said second predetermined temperature T.sub.2 until the desired final thickness for the monocrystalline germanium final layer is obtained. The invention is useful for making semiconductor devices.
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