Method of selectively forming local interconnects using design rules
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United States of America Patent
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Mar 18, 2003
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N/A
app pub date -
Aug 31, 2000
filing date -
Aug 31, 2000
priority date (Note) -
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Abstract
The invention includes a method of fabricating a circuit in a manner to place certain structures within a predefined distance of one another. Electrical connections are formed between certain structures of silicon, by annealing a conductive material to cause silicon out-diffusing to form local interconnects. The silicon out-diffusion can be facilitated without a masking step thereby simplifying as well as speeding up the fabrication process. The invention also includes a local interconnect thus formed.
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