Precursors for making low dielectric constant materials with improved thermal stability
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United States of America Patent
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Mar 18, 2003
Grant Date -
Oct 11, 2001
app pub date -
Apr 17, 2001
filing date -
Oct 24, 1997
priority date (Note) -
Expired
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Abstract
Fluorinated chemical precursors, methods of manufacture, polymer thin films with low dielectric constants, and integrated circuits comprising primarily of sp.sup.2 C--F and some hyperconjugated sp.sup.3 C--F bonds are disclosed in this invention. Precursors are disclosed for creating fluorinated silanes and siloxanes, and fluorinated hydrocarbon polymers. Thermal transport polymerization (TP), chemical vapor deposition (CVD), plasma enhanced CVD (PECVD), high density PECVD (HDPCVD), photon assisted CVD (PACVD), and plasma-photon assisted (PPE) CVD and PPETP of these chemicals provides thin films with low dielectric constants and high thermal stabilities for use in the manufacture of integrated circuits.
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