Very low voltage actuated thyristor with centrally-located offset buried region
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United States of America Patent
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Mar 11, 2003
Issued Date -
N/A
app pub date -
Feb 15, 2000
filing date -
Mar 1, 1999
priority date (Note) -
Expired
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Abstract
A semiconductor thyristor device that incorporates buried regions centrally located on the chip with respect to the other semiconductor regions. By centering an upper and lower buried region, larger-area contacts can be realized, thereby increasing the current capability of the device. In order to achieve low breakover voltage devices, the buried regions are offset laterally with respect to the respective emitter regions. The low voltage thyristor devices can be incorporated into five-pin protection modules for protecting customer circuits.
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