Chemical mechanical polishing slurry
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United States of America Patent
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Mar 11, 2003
Grant Date -
Jul 25, 2002
app pub date -
Nov 20, 2001
filing date -
Nov 24, 2000
priority date (Note) -
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Abstract
This invention provides a chemical mechanical polishing slurry for polishing a metal film formed on an insulating film with a concave on a substrate wherein the slurry contains a thickener without an ionic group with an opposite sign to a charge on a polishing material surface to 0.001 wt % or more and less than 0.05 wt % to the total amount of the slurry and has a slurry viscosity of 1 mPa.multidot.s to 5 mPa.multidot.s both inclusive. The polishing slurry may be used in CMP to form a reliable damascene electric connection with excellent electric properties at a higher polishing rate, i.e., a higher throughput while preventing dishing or erosion.
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