Method of forming a sion antireflection film which is noncontaminating with respect to deep-uv photoresists
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Mar 4, 2003
Grant Date -
N/A
app pub date -
Jul 18, 2001
filing date -
Oct 1, 1998
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
A method of forming a silicon oxynitride antireflection film which is noncontaminating with respect to deep-ultraviolet photoresists (DUV photoresists) on each of a series of silicon semiconductor substrates successively introduced into the same reactor chamber includes a step of plasma-enhanced chemical vapor deposition (PECVD) of a silicon oxynitride antireflection film and treatment of the antireflection film with an oxygen plasma. The reactor chamber is cleaned before the successive introduction of each of the substrates by purging the reactor chamber using an oxygen-free gas plasma and then depositing a silicon oxynitride blanket by plasma-enhanced chemical vapor deposition using precursor gases.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully