Thermoelectric conversion material, and method for manufacturing same
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United States of America Patent
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Feb 25, 2003
Grant Date -
Jul 11, 2002
app pub date -
Aug 17, 2001
filing date -
Aug 18, 2000
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A silicon-based polycrystal powder, which contains no more than 30 at % Ge, C, Sn, or another such element that does not generate carriers as well as an added element that does generate carriers, and which has a crystal structure including crystal grains made up of at least 80 at % silicon, and a grain boundary phase where at least one type of said added element is precipitated at the boundary of said crystal grains, is mixed with a clathrate compound powder with low thermal conductivity and electrical resistivity, and this mixture is subjected to hot compression molding, the product of which has a composite structure in which the particles of the clathrate compound polycrystals are disposed around the particles of the silicon-based polycrystals.
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