Bond pad structure and its method of fabricating
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United States of America Patent
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Feb 25, 2003
Grant Date -
May 30, 2002
app pub date -
Jan 28, 2002
filing date -
Dec 10, 1999
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A bond pad structure and a method of fabricating such structure are disclosed in the invention. The bond pad structure is formed over a predetermined area defined on a semiconductor substrate. The bond pad structure includes at least two metal layers formed over the predetermined area and at least one sub-structure combination layer which each is formed over the predetermined area and formed between two corresponding first metal layers. Each sub-structure combination layer includes a dielectric layer formed over the predetermined area, formed-through via openings with special disposition on the dielectric layer, a first diffusion barrier layer formed over the dielectric layer and the sidewalls and bottom of the via openings, a metal material filled into the via openings to form via plugs, and a second diffusion barrier layer formed over the first diffusion barrier layer and via plugs. Due to special disposition of via plugs and well adhesion between metal layer and diffusion barrier layers, the bond pad structure, according to the invention, can prevent form damage possibly induced during subsequent probe test procedure and wire bonding process.
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