RF power transistor having low parasitic impedance input feed structure
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United States of America Patent
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Feb 18, 2003
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N/A
app pub date -
Sep 28, 2000
filing date -
Sep 28, 2000
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Abstract
An RF microwave power transistor has an input/output feed structure which functions as a low impedance microstrip line by providing a ground plane in close proximity to the feed structure on one surface of a semiconductor body. A second ground plane can be provided on an opposing surface of the semiconductor body with vias interconnecting the first and second ground planes. In addition to reducing feed impedance, a larger total transistor size can be provided before 'odd mode oscillation' occurs.
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