Field emission transistor
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United States of America Patent
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Feb 11, 2003
Grant Date -
N/A
app pub date -
Aug 28, 2000
filing date -
Aug 28, 2000
priority date (Note) -
Expired
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Abstract
Field emission transistors where either N type or P type devices are made with an insulated gate isolated from both the emitter and the collector. Such devices have input voltage levels that match the output levels, and as such are fully cascadable and integrable. Emitter and collector functions are combined in combinations to make complimentary pairs, NAND gates and NOR gates.
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