Hillock inhibiting method for forming a passivated copper containing conductor layer
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United States of America Patent
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Feb 11, 2003
Grant Date -
N/A
app pub date -
Sep 6, 2001
filing date -
Sep 6, 2001
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Abstract
Within a method for fabricating a microelectronic fabrication having formed therein a copper containing conductor layer passivated with a passivation layer, there is first: (1) pre-heated the copper containing conductor layer to a temperature of from about 300 to about 450 degrees centigrade for a time period of from about 30 to about 120 seconds to form a pre-heated copper containing conductor layer; and then (2) plasma treated the pre-heated copper containing conductor layer within a reducing plasma to form a plasma treated pre-heated copper containing conductor layer; prior to (3)forming upon the plasma treated pre-heated copper containing conductor layer the passivation layer. The foregoing process sequence provides for attenuated hillock defects within the plasma treated pre-heated copper containing conductor layer when forming the passivation layer thereupon.
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