Method for making a test wafer from a substrate
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United States of America Patent
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Feb 11, 2003
Grant Date -
N/A
app pub date -
Jan 10, 2000
filing date -
Jan 10, 2000
priority date (Note) -
Expired
status (Latency Note)
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Abstract
Provided is a test wafer and a process for making the same that includes a plurality of peaks on a surface thereof that have a cross-section sufficient to reduce the stress of a refractory metal layer deposited thereon. The present invention is based upon the discovery that by fracturing a refractory metal layer on a test wafer reduces the stress to which the test wafer is subjected. The test includes a substrate having a surface with a plurality of peaks and troughs formed therein defining a roughness. Typically, the roughness Ra is in the range of 500 to 1200 micrometers.
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