Pre-metal dielectric rapid thermal processing for sub-micron technology
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United States of America Patent
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Feb 4, 2003
Grant Date -
N/A
app pub date -
Aug 23, 2000
filing date -
Sep 7, 1999
priority date (Note) -
Expired
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Abstract
A process for forming silicate glass layers on substrates is disclosed. A silicate glass layer is first deposited onto a substrate, such as a semiconductor wafer. The wafer is then placed in a thermal processing chamber and heated in the presence of a reactive gas. The object is heated to a temperature sufficient for reflow of the silicate glass. In one embodiment, the atmosphere contained within the processing chamber comprises steam in combination with a reactive gas. The reactive gas can be, for instance, hydrogen, oxygen, nitrogen, dinitrogen oxide, ozone, hydrogen peroxide, atomic and/or molecular hydrogen, or radicals or mixtures thereof.
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