Method and apparatus for slurry distribution profile control in chemical-mechanical planarization
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United States of America Patent
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Feb 4, 2003
Grant Date -
N/A
app pub date -
Feb 25, 2000
filing date -
Feb 25, 2000
priority date (Note) -
Expired
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Abstract
A nonplanar substrate surface is substantially uniformly planarized by a chemical mechanical planarization (CMP) process. The CMP process uses multiple sources of slurry delivered in between a slurry distribution screen and a slurry membrane of the CMP apparatus. The multiple slurry sources have differing chemical and physical compositions, and are delivered to different locations along the membrane. The slurries bleed into each other during polish to form a radially-variable, slurry abrasiveness concentration gradient. As a result, there are areas with a greater abrasiveness concentration of slurry, and hence a greater frictional contact. The slurry flow rate and concentration is adjusted along the wafer surface according to the non-uniformly planar areas of the wafer. Consequently, uniform planarization is substantially achieved.
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