Apparatus and method for plasma treatment

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United States of America Patent

PATENT NO 6514347
APP PUB NO 20010015262A1
SERIAL NO

09782519

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Abstract

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A compensation ring 31 disposed to surround a periphery of a wafer W on a susceptor 30 is concentrically divided into an inside first compensation ring member 32 and an outside second compensation ring member 33. A width of a first compensation ring member 32 is made such thin as one to three times mean free path of treatment gas molecules, thereby suppressing heat transfer between a susceptor 30 and a second compensation ring member 33. A base of a second compensation ring member, through a layer of conductive silicone rubber 34, is made to come into an intimate contact with an upper surface of a susceptor 30, thus helping to cool.

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Patent Owner(s)

Patent OwnerAddress
TOKYO ELECTRON LIMITEDAKASAKA BIZ TOWER 3-1 AKASAKA 5-CHOME MINATO-KU TOKYO 107-6325

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Denpoh, Kazuki Nirasaki, JP 30 1463

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  • 9 Citation Count
  • C23C Class
  • 2.74 % this patent is cited more than
  • 22 Age
Citation count rangeNumber of patents cited in rangeNumber of patents cited in various citation count ranges11171984928129927501 - 1011 - 2021 - 3031 - 4041 - 5051 - 6061 - 7071 - 8081 - 90100 +0102030405060708090100110120130140150160170180

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