Method of fabricating thin film transistor
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United States of America Patent
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Jan 28, 2003
Issued Date -
N/A
app pub date -
Feb 28, 2001
filing date -
Feb 10, 1998
priority date (Note) -
Expired
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Abstract
The present invention relates to a method of fabricating a thin film transistor in which a metal silicide line generated from Metal Induced Lateral Crystallization is located at the outside of a channel region. The present invention includes the steps of forming a semiconductor layer on a substrate wherein the semiconductor layer has a first region, a channel region and a second region in order, forming a gate insulating layer/a gate electrode on the channel region, doping the first and the second region heavily with impurity, forming a metal film pattern making the first region a metal-offset, and crystallizing the semiconductor layer by means of applying thermal treatment to the semiconductor layer having the metal film.
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