Flowable germanium doped silicate glass for use as a spacer oxide
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United States of America Patent
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Jan 21, 2003
Grant Date -
Jan 24, 2002
app pub date -
Jun 18, 2001
filing date -
Aug 21, 1998
priority date (Note) -
Expired
status (Latency Note)
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Abstract
The invention is a method for constructing an integrated circuit structure and an apparatus produced by the method. The method generally comprises constructing an integrated circuit structure by disposing a layer of doped oxide, the dopant being iso-electronic to silicon, and then reflowing the layer of doped oxide. Thus, the apparatus of the invention is an integrated circuit structure comprising a reflowed layer of doped oxide wherein the dopant is iso-electronic to silicon. In one particular embodiment, the method generally comprises constructing an integrated circuit feature on a substrate; disposing a layer of doped oxide, the dopant being iso-electronic to silicon, over the integrated circuit feature and the substrate in a substantially conformal manner; reflowing the layer of doped oxide; and etching the insulating layer and the oxide. Thus, in this particular embodiment, the apparatus comprises an integrated circuit feature constructed on a substrate and a reflowed layer of doped oxide, the dopant being iso-electronic to silicon, disposed over the integrated circuit feature and the substrate.
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