Ballast layer for field emissive device
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United States of America Patent
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Jan 14, 2003
Grant Date -
N/A
app pub date -
Feb 3, 2000
filing date -
Feb 3, 2000
priority date (Note) -
Expired
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Abstract
A ballast layer for a field emissive device includes a very thin layer of strongly doped nanocrystalline silicon and one or more moderately doped layers of an amorphous silicon-based material.
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